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Datasheet IRF220 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | IRF220 | N-Channel Power MOSFETs Semiconductor
October 1997
IRF220, IRF221, IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
Features
• 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Charac |
Harris |
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8 | IRF220 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF220
DESCRIPTION ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.8Ω(Max) ·High Speed Applications
APPLICATIONS ·Switching power supplies
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Inchange Semiconductor |
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7 | IRF220 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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6 | IRF220 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Semiconductor
IRF220, IRF221, IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci� |
Intersil Corporation |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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