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Datasheet IRF1407S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRF1407S | Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) PD -94335
Benefits
q q q q q q
IRF1407S IRF1407L
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 75V RDS(on) = 0.0078Ω
S
Description
Advanced HEXFET |
International Rectifier |
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2 | IRF1407SPbF | Power MOSFET ( Transistor ) IRF1407SPbF IRF1407LPbF
Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
Description Advanced HEXFET® Power MOSFETs from International |
Infineon |
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1 | IRF1407SPbF | Power MOSFETs PD -95486
IRF1407SPbF
Benefits O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free Description Advanced HEXFET® Power MOSFETs from International
Rectifier utiliz |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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