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Datasheet IRF1404 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | IRF1404 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF1404
FEATURES ·Drain Current –ID= 162A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.004Ω(Max) ·Fast Switching
Description Seventh Generation HEXFET ® P |
 Inchange Semiconductor |
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| 13 | IRF1404 | Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Automotive Qualified (Q101)
Description
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniqu |
 International Rectifier |
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| 12 | IRF1404L | Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A) PD -93853C
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ®
l l
IRF1404S IRF1404L
D
VDSS = 40V
G S
RDS(on) = 0.004Ω ID = 162A
Seventh Generation HEXFET Pow |
International Rectifier |
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| 11 | IRF1404LPbF | Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr |
International Rectifier |
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