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Datasheet IRF1310S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRF1310S   Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=41A)

Previous Datasheet Index Next Data Sheet PD - 9.1221 IRF1310S HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Description Fourth Generation HEXFETs from I
International Rectifier
International Rectifier
datasheet IRF1310S pdf

IRF13 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRF1310N

Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)

PD - 91504A IRF1310N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.036Ω ID = 42A Description Fifth Generation HEXFETs from International Rect
International Rectifier
International Rectifier
datasheet pdf - International Rectifier
IRF13N50

N-Channel Power MOSFET / Transistor

SEMICONDUCTOR IRF13N50 Series N-Channel Power MOSFET (14A, 500Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of ene
Nell
Nell
datasheet pdf - Nell
IRF130

N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor


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SPS122

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Sanken
Sanken
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