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Datasheet IRF123 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF123 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF123
DESCRIPTION ·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.4Ω(Max) ·Nanosecond Switching Speeds
APPLICATIONS ·Switching power suppl |
 Inchange Semiconductor |
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| 4 | IRF123 | N-Channel Power MOSFETs/ 11 A/ 60-100 V |
 Fairchild Semiconductor |
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| 3 | IRF123 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 2 | IRF123 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Semiconductor
IRF120, IRF121, IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci |
 Intersil Corporation |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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