Datasheet IRF1010NPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF1010NPBF	HEXFET Power MOSFET PD - 94966 IRF1010NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A Advanced HEXFET® Power MOSFE	International Rectifier

IRF1010N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF1010N	Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A) PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A Description Advanced HEXFET® Power	International Rectifier
IRF1010NS	Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power	International Rectifier
IRF1010NLPBF	Power MOSFET ( Transistor ) Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRF1010NSPbF IRF1010NLPbF HEXFET® Power MOSFET D PD - 95103 VDSS = 55V RDS(on) = 11mΩ G S Absolut	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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