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Datasheet IRF1010N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF1010N | Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A) PD - 91278
IRF1010N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 11mΩ
G S
ID = 85A
Description
Advanced HEXFET® Power MOSFETs from Intern |
 International Rectifier |
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| 5 | IRF1010NL | Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) PD - 94171
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
IRF1010NS IRF1010NL
VDSS = 55V RDS(on) = 11mΩ
G S
Advanced HEXFET ® Power MOSFETs from Interna |
International Rectifier |
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| 4 | IRF1010NLPBF | Power MOSFET ( Transistor ) Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRF1010NSPbF IRF1010NLPbF
HEXFET® Power MOSFET
D
PD - 95103
VDSS = 55V RDS(on) = 11mΩ
G S
Absolute Maximum Ratings
ID |
International Rectifier |
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| 3 | IRF1010NPBF | HEXFET Power MOSFET PD - 94966
IRF1010NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
D
VDSS = 55V RDS(on) = 11mΩ
G S
ID = 85A
Advanced HEXFET® Power MOSFE |
International Rectifier |
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