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Datasheet IPU64CN10NG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IPU64CN10NG   Power Transistor

IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target
Infineon Technologies
Infineon Technologies		 datasheet IPU64CN10NG pdf

IPU64CN1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IPU64CN10NG

Power Transistor

IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies


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Número de pieza Descripción Fabricantes PDF
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