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Datasheet IPP04CN10NG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IPP04CN10NG | Power-Transistor
IPB04CN10N G
IPI04CN10N G IPP04CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualifi |
Infineon Technologies |
IPP04CN1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IPP04CN10NG | Power-Transistor |
Infineon Technologies |
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Número de pieza | Descripción | Fabricantes | |
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