Datasheet IPI086N10N3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPI086N10N3G	Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A • 175 °C operating tem	Infineon

IPI086N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPI086N10N3G	Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A • 1	Infineon

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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