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Datasheet IPD068N10N3G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IPD068N10N3G | Power-Transistor IPD068N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified accor |
Infineon Technologies |
IPD068N10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IPD068N10N3G | Power-Transistor |
Infineon Technologies |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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