Datasheet IPB180N04S4-01 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPB180N04S4-01	Power-Transistor IPB180N04S4-01 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 1.3	Infineon

IPB180N04S4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPB180N04S4-H0	Power-Transistor IPB180N04S4-H0 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R	Infineon
IPB180N04S4-01	Power-Transistor IPB180N04S4-01 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R	Infineon
IPB180N04S4-00	Power-Transistor IPB180N04S4-00 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R	Infineon

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Número de pieza	Descripción	Fabricantes	PDF
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