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Datasheet IPB080N06NG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IPB080N06NG | Power-Transistor
IPB080N06N G
IPP080N06N G
OptiMOS® Power-Transistor
Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS( |
Infineon Technologies |
IPB080N0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IPB080N06NG | Power-Transistor |
Infineon Technologies |
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IPB080N03LG | Power-Transistor |
Infineon |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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