Datasheet IPB042N10N3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPB042N10N3G	Power-Transistor IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V 4.2 mW 100 A • 175 °C operating temperature �	Infineon Technologies

IPB042N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPB042N10N3G	Power-Transistor IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V 4.2 mW 100 A • 175 °C operat	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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