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Datasheet ICTE8 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ICTE8 | TVS Diode ( Rectifier ) www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
VBR (uni-directional)
6.0 V to 21.2 V
VBR (bi-directional)
9.2 V to 21.2 V
PPPM
1500 W
PD 6.5 W
IFSM
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 Vishay |
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| 3 | ICTE8 | (ICTE5 - ICTE18C) Transient Voltage Suppressors www.DataSheet.co.kr
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repe |
 Vishay Siliconix |
|
| 2 | ICTE8C | TVS Diode ( Rectifier ) www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
VBR (uni-directional)
6.0 V to 21.2 V
VBR (bi-directional)
9.2 V to 21.2 V
PPPM
1500 W
PD 6.5 W
IFSM
|
Vishay |
|
| 1 | ICTE8C | (ICTE5 - ICTE18C) Transient Voltage Suppressors www.DataSheet.co.kr
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repe |
Vishay Siliconix |
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