Datasheet GT80J101A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT80J101A	Insulated Gate Bipolar Transistor GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) · · · Maximum Ratings (Ta = 25°C) Characteri	Toshiba Semiconductor

GT80J1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT80J101	N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)	Toshiba Semiconductor
GT80J101B	Insulated Gate Bipolar Transistor GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications • • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum R	Toshiba Semiconductor
GT80J101A	Insulated Gate Bipolar Transistor GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) · · · Maximum Ratings (Ta	Toshiba Semiconductor

Esta página es del resultado de búsqueda del GT80J101A. Si pulsa el resultado de búsqueda de GT80J101A se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap