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Datasheet GT80J101 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | GT80J101 | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) |
 Toshiba Semiconductor |
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| 2 | GT80J101A | Insulated Gate Bipolar Transistor GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101A
High Power Switching Applications
Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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Maximum Ratings (Ta = 25°C)
Characteri |
Toshiba Semiconductor |
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| 1 | GT80J101B | Insulated Gate Bipolar Transistor GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
• • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm
Maximum Ratings (Ta = 25°C)
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Toshiba Semiconductor |
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