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Datasheet GT60M324 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT60M324 | SILICON N CHANNEL IGBT GT60M324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M324
Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.11μs (typ |
Toshiba |
GT60M Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT60M303 | SILICON N CHANNEL IGBT |
Toshiba Semiconductor |
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GT60M104 | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) |
Toshiba Semiconductor |
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GT60M301 | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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