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Datasheet GT60M324 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GT60M324   SILICON N CHANNEL IGBT

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11μs (typ
Toshiba
Toshiba
datasheet GT60M324 pdf

GT60M Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GT60M303

SILICON N CHANNEL IGBT

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP.) FRD : trr = 0.7μ
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
GT60M104

N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
GT60M301

N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
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