|
|
Datasheet GT60M303 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT60M303 | SILICON N CHANNEL IGBT GT60M303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT60M303
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP.)
FRD : trr = 0.7μs (TYP.) z Low satur |
Toshiba Semiconductor |
GT60M Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT60M303 | SILICON N CHANNEL IGBT |
Toshiba Semiconductor |
|
GT60M104 | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) |
Toshiba Semiconductor |
|
GT60M301 | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del GT60M303. Si pulsa el resultado de búsqueda de GT60M303 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |