Datasheet GT5G131 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT5G131	Strobe Flash Applications GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • • • • • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate struct	Toshiba Semiconductor

GT5G Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT5G103	N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)	Toshiba Semiconductor
GT5G102	Insulated Gate Bipolar Transistor GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) · · Enhancement-mode 12 V gate drive · · · Max	Toshiba Semiconductor
GT5G101	Insulated Gate Bipolar Transistor	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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