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Datasheet GT50J322 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT50J322 | SILICON N CHANNEL IGBT GT50J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J322
FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
Unit: mm
z FRD included between emitter and collector
z Enhancement mode type
z High speed
: tf = 0.25μs (Typ.) (IC = 50A)
z Low saturat |
Toshiba Semiconductor |
GT50J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT50JR22 | Silicon N-Channel IGBT |
Toshiba |
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GT50J101 | TRANSISTOR IGBT |
Toshiba |
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GT50J322 | SILICON N CHANNEL IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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