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Datasheet GT50J122 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT50J122 | Insulated Gate Bipolar Transistor GT50J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) Fourth-generation IG |
Toshiba Semiconductor |
GT50J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT50JR22 | Silicon N-Channel IGBT |
Toshiba |
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GT50J101 | TRANSISTOR IGBT |
Toshiba |
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GT50J322 | SILICON N CHANNEL IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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