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Datasheet GT50G321 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GT50G321   Silicon N Channel IGBT

GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) · Low saturation volt
Toshiba Semiconductor
Toshiba Semiconductor
datasheet GT50G321 pdf

GT50G Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GT50G321

Silicon N Channel IGBT

GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) ·
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
GT50G102

Insulated Gate Bipolar Transistor

ETC
ETC
datasheet pdf - ETC


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Número de pieza Descripción Fabricantes PDF
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