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Datasheet GT50G321 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT50G321 | Silicon N Channel IGBT GT50G321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50G321
The 4th Generation Current Resonance Inverter Switching Applications
Unit: mm
· FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) · Low saturation volt |
Toshiba Semiconductor |
GT50G Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT50G321 | Silicon N Channel IGBT |
Toshiba Semiconductor |
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GT50G102 | Insulated Gate Bipolar Transistor |
ETC |
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Número de pieza | Descripción | Fabricantes | |
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