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Datasheet GT45F123 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | GT45F123 | Insulated Gate Bipolar Transistor GT45F123
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT45F123
For PDP-TV Applications
• • • • • 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit: m |
 Toshiba Semiconductor |
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GT45F Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| GT45F123 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
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