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Datasheet GT40T302 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GT40T302   Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr = 0.7 μs (typ.) (di/
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet GT40T302 pdf

GT40T Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GT40T301

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
GT40T101

Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR

GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l Enhancement−Mode l High Speed l Low Saturation : tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta =
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
GT40T302

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr =
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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