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Datasheet GT40T101 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT40T101 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR GT40T101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40T101
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l Enhancement−Mode l High Speed l Low Saturation
: tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERIS |
Toshiba Semiconductor |
GT40T Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT40T301 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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GT40T101 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR |
Toshiba Semiconductor |
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GT40T302 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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