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Datasheet GT40Q323 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GT40Q323   Silicon N Channel IGBT / Voltage Resonance Inverter Switching Application

GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application Unit: mm • • • • • Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generat
Toshiba Semiconductor
Toshiba Semiconductor
datasheet GT40Q323 pdf

GT40Q Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GT40Q322

Voltage Resonance Inverter Switching Application

GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary GT40Q322 Unit: mm Voltage Resonance Inverter Switching Application • • • • • Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FRD included between e
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
GT40QR21

Silicon N-Channel IGBT

Datasheet.es GT40QR21 Discrete IGBTs Silicon N-Channel IGBT GT40QR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications The product(s) described herein should not be used for any other application. Note: 2. Features (1) (2) (3) (4) 6.5th g
Toshiba
Toshiba
datasheet pdf - Toshiba
GT40Q321

Voltage Resonance Inverter Switching Application

GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


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SPS122

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