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Datasheet GT40M101 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT40M101 | SILICON N−CHANNEL IGBT GT40M101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT40M101
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement−Mode
: tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTER |
Toshiba Semiconductor |
GT40M Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT40M101 | SILICON N−CHANNEL IGBT |
Toshiba Semiconductor |
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GT40M301 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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