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Datasheet GT40J322 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT40J322 | Insulated Gate Bipolar Transistor GT40J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J322
Current Resonance Inverter Switching Application
• • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = |
Toshiba Semiconductor |
GT40J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT40J121 | Discrete IGBTs |
Toshiba |
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GT40J322 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
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GT40J321 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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