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Datasheet GT35J321 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GT35J321   Fourth Generation IGBT

GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (
Toshiba
Toshiba
datasheet GT35J321 pdf

GT35J Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GT35J321

Fourth Generation IGBT

GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (s
Toshiba
Toshiba
datasheet pdf - Toshiba


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Número de pieza Descripción Fabricantes PDF
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