Datasheet GT346A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT346A	PNP Transistor Транзисторы биполярные p-n-p малой мощности сверхвысокой частоты Название ГТ346А Ik max,mA 10 Uкэr max(Uкэ0 max),B15 Uкбо max,B 20 Uэбо max,B 0.3 Pk max(P max),мВт 50 при T,C 25 Tп max,C 85 Tmax,C 55 h2	ETC

GT3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT30J126	Silicon N-Channel IGBT GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • • • Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eo	Toshiba
GT30J122	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING Datasheet.es GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE	Toshiba Semiconductor
GT35J321	Fourth Generation IGBT GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (s	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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