Datasheet GT30J121 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT30J121	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low swi	Toshiba Semiconductor

GT30J Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT30J126	Silicon N-Channel IGBT GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • • • Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eo	Toshiba
GT30J122	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING Datasheet.es GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE	Toshiba Semiconductor
GT30J122A	Silicon N-Channel IGBT GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • • Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications The product(s) described herein should not be used for any ot	Toshiba

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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