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Datasheet GT25Q301 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GT25Q301   N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emi
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet GT25Q301 pdf

GT25Q Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GT25Q101

N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)

 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
GT25Q102

N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)

GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) · · · · Maximum Ratings (Ta = 2
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
GT25Q301

N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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