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Datasheet GT25G101 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | GT25G101 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) GT25G101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101
STROBE FLASH APPLICATIONS
l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector−Emit |
 Toshiba Semiconductor |
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| 1 | GT25G101SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
Toshiba Semiconductor |
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