Datasheet GT20J321 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT20J321	High Power Switching Applications Fast Switching Applications GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0	Toshiba Semiconductor

GT20J Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT20J101	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximu	Toshiba Semiconductor
GT20J341	Discrete IGBTs Silicon N-Channel IGBT GT20J341 Discrete IGBTs Silicon N-Channel IGBT GT20J341 1. Applications • Motor Drivers 2. Features (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate	Toshiba
GT20J301	N CHANNEL (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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