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Datasheet GT15J321 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT15J321 | High Power Switching Applications Fast Switching Applications GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications Fast Switching Applications
Unit: mm
• • • • • •
The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (s |
Toshiba Semiconductor |
GT15J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT15J311 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
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GT15J101 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
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GT15J103 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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