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Datasheet GT10J321 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT10J321 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT TOSHIBA
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT10J321
GT10J321
High Power Switching Applications Fast Switching Applications
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The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Refer |
Toshiba Semiconductor |
GT10J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT10J301 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
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GT10J312SM | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
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GT10J321 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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