DataSheet.es    



Datasheet GT10G131 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GT10G131   Insulated Gate Bipolar Transistor

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications • • • • • • • Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE
Toshiba Semiconductor
Toshiba Semiconductor
datasheet GT10G131 pdf

GT10G Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GT10G101

SIlicon N-Channel MOS Type

ETC
ETC
datasheet pdf - ETC
GT10G102

SIlicon N-Channel MOS Type

ETC
ETC
datasheet pdf - ETC
GT10G131

Insulated Gate Bipolar Transistor

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications • • • • • • • Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


Esta página es del resultado de búsqueda del GT10G131. Si pulsa el resultado de búsqueda de GT10G131 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


Enlace url :
[1] 

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap