Datasheet GSMBT5551 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GSMBT5551	TRANSISTOR ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 5551 Description Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA) Complemen	GTM

GSMBT5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GSMBT5551	TRANSISTOR ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 5551 Description Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V	GTM
GSMBT5401	TRANSISTOR ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 5401 Description Features P NP EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150	GTM
GSMBT5089	TRANSISTOR ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 5089 Description Package Dimensions NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Ma	GTM

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Número de pieza	Descripción	Fabricantes	PDF
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