Datasheet GP801DDS18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GP801DDS18	Dual Switch Low VCE(SAT) IGBT Module GP801DDS18 GP801DDS18 Dual Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS235-3.0 DS5235-4.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (ma	Dynex Semiconductor

GP801DD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GP801DDS18	Dual Switch Low VCE(SAT) IGBT Module GP801DDS18 GP801DDS18 Dual Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS235-3.0 DS5235-4.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCE	Dynex Semiconductor
GP801DDM18	Hi-Reliability Dual Switch Low VCESAT IGBT Module GP801DDM18 GP801DDM18 Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Replaces October 2000, version DS5292-2.5 DS5292-3.0 January 2001 FEATURES s s s s s Low VCE(SAT) 800A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Subs	Dynex Semiconductor

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