Datasheet GP800NSS33 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GP800NSS33	Single Switch IGBT Module Preliminary Information GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat)	Dynex Semiconductor

GP800NS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GP800NSS33	Single Switch IGBT Module Preliminary Information GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction KEY PARAMETERS	Dynex Semiconductor
GP800NSM33	Hi-Reliability Single Switch IGBT Module Preliminary Information GP800NSM33 GP800NSM33 Hi-Reliability Single Switch IGBT Module Preliminary Information DS5372-2.0 February 2001 FEATURES s s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 3300V Rating 800A Per Module KEY PARAMETERS VCES	Dynex Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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