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Datasheet GP20B60PD Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1GP20B60PD IRGP20B60PD

PD - 94626 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE www.datasheet4u.com IRGP20B60PD C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies VCES = 600V VCE(on) typ. = 2.05V @ VGE = 1
IRF
IRF		data


GP2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1GP20Paperless Recorder

<> <> General Specifications GS 04L52B01-01EN GP10/GP20 Paperless Recorder (Portable type) GX90XA/GX90XD/GX90YD I/O Modules  OVERVIEW The GP10/GP20 are portable type paperless recorders that display real-time measured data on a touch screen and save data on an external storage
Yokogawa
Yokogawa		data
2GP200PPTC Thermistors

GPxxx Series PPTC Thermistors (PPTC Resettable Fuses) Shenzhen Goodpoly Electron Co., Ltd. ¡÷ ¡÷ ¡÷ Radial leaded devices Very high voltage surge capabilities Available in lead-free version ¡÷ Agency Recognition: UL¡¢ TUV Electrical Characteristics Model GP070 GP100 GP120 GP-CW120 GP
Goodpoly
Goodpoly		thermistor
3GP2001-7R120...195 Watt DC-DC Converters

P Series 120...195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3...96 V DC 4242V DC I/O electric strength test voltage LGA • Extremely slim case (4 TE), fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range –40..
Power-One
Power-One		converter
4GP200MHS12Half Bridge IGBT Module

GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7
Dynex Semiconductor
Dynex Semiconductor		igbt
5GP200MHS18Half Bridge IGBT Module

GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 200A 400A APPLICATIONS s s s s High
Dynex Semiconductor
Dynex Semiconductor		igbt
6GP200MKS12IGBT Chopper Module Preliminary Information

GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES s s s s Internally Configured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(P
Dynex Semiconductor
Dynex Semiconductor		igbt
7GP200MLS12IGBT Chopper Module Preliminary Information

GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES s s s s Internally Configured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(P
Dynex Semiconductor
Dynex Semiconductor		igbt



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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