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Datasheet GP1600 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | GP1600 | (GP1xxx) High Voltage Diode Rectifiers DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
a D . VOIDw FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION w (Solder Voids: Typical < 2%, Max. < 10% of Die Area) w
LOW FORWARD VOLTAGE DROP HIGH CURR |
 Diotec Electronics |
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| 4 | GP1600FSM12 | Single Switch IGBT Module Advance Information GP1600FSM12
GP1600FSM12
Single Switch IGBT Module Advance Information
DS5451-1.2 October 2001
FEATURES
s s s s
KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) 1200V 2.7V (max) 1600A (max) 3200A
High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Sub |
 Dynex Semiconductor |
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| 3 | GP1600FSM18 | Hi-Reliability Single Switch IGBT Module GP1600FSM18
GP1600FSM18
Hi-Reliability Single Switch IGBT Module
Replaces May 2000 version, DS5361-1.1 DS5361-2.3 January 2001
FEATURES
s s s s
High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max |
Dynex Semiconductor |
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| 2 | GP1600FSS12 | Powerline N-Channel Single Switch IGBT Module Advance Information GP1600FSS12
GP1600FSS12
Powerline N-Channel Single Switch IGBT Module Advance Information
Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000
The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low |
Dynex Semiconductor |
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