|
|
Datasheet GJ1386 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GJ1386 | PNP EPITAXIAL SILICON TRANSISTOR
ISSUED DATE :2005/07/25 REVISED DATE :
GJ1386
Description Features
P NP EP ITAX I AL S ILI CO N T RANSI STOR
The GJ1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics
Package Dimensions
TO-25 |
GTM |
GJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GJ1084 | 5A Low Dropout Positive Adjustable |
GTM |
|
GJ1952 | PNP HIGH SPEED SWITCHING TRANSISTOR |
GTM |
|
GJ122 | NPN EPITAXIAL PLANAR TRANSISTOR |
GTM |
Esta página es del resultado de búsqueda del GJ1386. Si pulsa el resultado de búsqueda de GJ1386 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |