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Datasheet GI3669 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GI3669   PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B GI3669 Description Package Dimensions NPN EPITAXIAL PLANAR T RANSISTOR The GI3669 is designed for using in power amplifier applications, power switching applications. TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.
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datasheet GI3669 pdf

GI3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GI3310

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GI3310 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A The GI3310 provide the designer with the best combination of fast switching, low on-resistance and c
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datasheet pdf - GTM
GI3303

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/08/16 REVISED DATE : GI3303 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 25m 28A The GI3303 provide the designer with the best combination of fast switching, ruggedized device design,
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GTM
datasheet pdf - GTM
GI3302

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/08/24 REVISED DATE : GI3302 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 50m 16A The GI3302 provide the designer with the best combination of fast switching, ruggedized device design,
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GTM
datasheet pdf - GTM


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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