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Datasheet GDSSF2312 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GDSSF2312   MOSFET ( Transistor )

GDSSF2312 DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON
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datasheet GDSSF2312 pdf

GDSSF2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GDSSF2301B

MOSFET ( Transistor )

GDSSF2301B DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -20V,ID =
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datasheet pdf - GOOD-ARK
GDSSF2300B

MOSFET ( Transistor )

GDSSF2300B DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS
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datasheet pdf - GOOD-ARK
GDSSF22A5E

MOSFET ( Transistor )

Main Product Characteristics: VDSS 20V RDS(on) 3Ω ID 238mA Features and Benefits:  Low Gate Charge for Fast Switching  Small 1.6 x 1.6 mm Footprint  ESD Protected Gate  Pb-Free Package is Available  150℃ operating temperature GDSSF22A5E Pin Assignment S
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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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