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Datasheet GAP3SHT33-CAU Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GAP3SHT33-CAU | Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode
Features
• 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAU
VRRM IF @ 25 oC
QC
= 3300 V = 0.3 A = 20 nC
A |
GeneSiC |
GAP3SHT33- Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GAP3SHT33-CAU | Silicon Carbide Power Schottky Diode |
GeneSiC |
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GAP3SHT33-CAL | Silicon Carbide Power Schottky Diode |
GeneSiC |
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Número de pieza | Descripción | Fabricantes | |
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