Datasheet G8550S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	G8550S	PNP EPITAXIAL TRANSISTOR CORPORATION G8550S Description Features PNP EPITAXIAL PLANAR TANSISTOR ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B The G8550S is designed for general purpose amplifier applications. * High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S Package Dimension	GTM

G85 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
G8522	GaAs PIN photodiode	Hamamatsu Corporation
G8550	PNP EPITAXIAL TRANSISTOR CORPORATION G8550 Description Features P N P E P ITAX I A L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. High Collector current (IC: 1.5A)	GTM
G8551	PNP EPITAXIAL TRANSISTOR CORPORATION G8551 Description Features P N P E P ITAX I A L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. High Collector current (IC: 1.5A)	GTM

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Número de pieza	Descripción	Fabricantes	PDF
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