Datasheet G30FS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	G30FS	Diode (spec sheet)	American Microsemiconductor

G3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
G30T60	IGW30N60T IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Po	Infineon
G30N60	HGTG30N60 HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MO	ETC
G3MB-202P	Solid State relays Solid State Relay G3MB Low cost Subminiature PCB mounting 2 amp Single in-line package (SIP) SSR • Bottom is approximately 3 times smaller than G3M. • Low cost “SIP” package switches up to 2A loads. • Built in Snubber circuit and input resistor as option. • Two footp	Omron Electronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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