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Datasheet FSYE913A0D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FSYE913A0D | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs FSYE923A0D, FSYE923A0R
TM
Data Sheet
June 2000
File Number
4773.1
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appl |
 Intersil Corporation |
 |
| 2 | FSYE913A0D1 | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs FSYE923A0D, FSYE923A0R
TM
Data Sheet
June 2000
File Number
4773.1
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appl |
Intersil Corporation |
|
| 1 | FSYE913A0D3 | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Ordering number : ENN*6302
CMOS IC
LC35256FM, FT-55U/70U
256K (32768 words × 8 bits) SRAM Control Pins: OE and CE
Preliminary Overview
The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory |
Intersil Corporation |
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